Schottky-Barrier-Controllable Graphene Electrode to Boost Rectification in Organic Vertical P-N Junction Photodiodes
- Authors
- Kim, Jong Su; Choi, Young Jin; Woo, Hwi Je; Yang, Jeehye; Song, Young Jae; Kang, Moon Sung; Cho, Jeong Ho
- Issue Date
- 22-Dec-2017
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- graphene; organic photodiodes; Schottky barriers; vertical heterostructures; work function tunability
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.27, no.48
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 27
- Number
- 48
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6175
- DOI
- 10.1002/adfm.201704475
- ISSN
- 1616-301X
- Abstract
- Monolayer graphene is used as an electrode to develop novel electronic device architectures that exploit the unique, atomically thin structure of the material with a low density of states at its charge neutrality point. For example, a single semiconductor layer stacked onto graphene can provide a semiconductor-electrode junction with a tunable injection barrier, which is the basis for a primitive transistor architecture known as the Schottky barrier field-effect transistor. This work demonstrates the next level of complexity in a vertical graphene-semiconductor architecture. Specifically, an organic vertical p-n junction (p-type pentacene/n-type N,N-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C-8)) on top of a graphene electrode constituting a novel gate-tunable photodiode device structure is fabricated. The model device confirms that controlling the Schottky barrier height at the pentacene-graphene junction can (i) suppress the dark current density and (ii) enhance the photocurrent of the device, both of which are critical to improve the performance of a photodiode.
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Collections - College of Engineering > Department of Chemical Engineering > 1. Journal Articles
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