Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jinwu | - |
dc.contributor.author | Park, Youngseo | - |
dc.contributor.author | Yoo, Geonwook | - |
dc.contributor.author | Heo, Junseok | - |
dc.date.available | 2018-05-08T14:27:05Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.issn | 1556-276X | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6194 | - |
dc.description.abstract | We studied the variation of photoresponsivity in multi-layer MoS2 phototransistors as the applied bias changes. The photoresponse gain is attained when the photogenerated holes trapped in the MoS2 attract electrons from the source. Thus, the photoresponsivity can be controlled by the gate or drain bias. When the gate bias is below the threshold voltage, a small amount of electrons are diffused into the channel, due to large barrier between MoS2 and source electrode. In this regime, as the gate or drain bias increases, the barrier between the MoS2 channel and the source becomes lower and the number of electrons injected into the channel exponentially increases, resulting in an exponential increase in photoresponsivity. On the other hand, if the gate bias is above the threshold voltage, the photoresponsivity is affected by the carrier velocity rather than the barrier height because the drain current is limited by the carrier drift velocity. Hence, with an increase in drain bias, the carrier velocity increases linearly and becomes saturated due to carrier velocity saturation, and therefore, the photoresponsivity also increases linearly and becomes saturated. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.relation.isPartOf | NANOSCALE RESEARCH LETTERS | - |
dc.subject | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject | MONOLAYER MOS2 | - |
dc.subject | QUANTUM DOTS | - |
dc.subject | SINGLE-LAYER | - |
dc.subject | PHOTODETECTORS | - |
dc.subject | TRANSISTORS | - |
dc.subject | NANOSHEETS | - |
dc.title | Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1186/s11671-017-2368-2 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOSCALE RESEARCH LETTERS, v.12 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000415985300001 | - |
dc.identifier.scopusid | 2-s2.0-85035197963 | - |
dc.citation.title | NANOSCALE RESEARCH LETTERS | - |
dc.citation.volume | 12 | - |
dc.contributor.affiliatedAuthor | Yoo, Geonwook | - |
dc.identifier.url | https://nanoscalereslett.springeropen.com/track/pdf/10.1186/s11671-017-2368-2?site=nanoscalereslett.springeropen.com | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.oadoiVersion | published | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Soongsil University Library 369 Sangdo-Ro, Dongjak-Gu, Seoul, Korea (06978)02-820-0733
COPYRIGHT ⓒ SOONGSIL UNIVERSITY, ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.