Interplay between many body effects and Coulomb screening in the optical bandgap of atomically thin MoS2
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Youngsin | - |
dc.contributor.author | Han, Sang Wook | - |
dc.contributor.author | Chan, Christopher C. S. | - |
dc.contributor.author | Reid, Benjamin P. L. | - |
dc.contributor.author | Taylor, Robert A. | - |
dc.contributor.author | Kim, Nammee | - |
dc.contributor.author | Jo, Yongcheol | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Kim, Kwang S. | - |
dc.date.available | 2018-05-08T14:37:41Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2017-08-14 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6280 | - |
dc.description.abstract | Due to its unique layer-number dependent electronic band structure and strong excitonic features, atomically thin MoS2 is an ideal 2D system where intriguing photoexcited-carrier-induced phenomena can be detected in excitonic luminescence. We perform micro-photoluminescence (PL) measurements and observe that the PL peak redshifts nonlinearly in mono-and bi-layer MoS2 as the excitation power is increased. The excited carrier-induced optical bandgap shrinkage is found to be proportional to n(4/3), where n is the optically-induced free carrier density. The large exponent value of 4/3 is explicitly distinguished from a typical value of 1/3 in various semiconductor quantum well systems. The peculiar n(4/3) dependent optical bandgap redshift may be due to the interplay between bandgap renormalization and reduced exciton binding energy. | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.subject | STRONG PHOTOLUMINESCENCE ENHANCEMENT | - |
dc.subject | SEMICONDUCTOR QUANTUM-WELLS | - |
dc.subject | GAP RENORMALIZATION | - |
dc.subject | MONOLAYER MOS2 | - |
dc.subject | VALLEY POLARIZATION | - |
dc.subject | ELECTRON-ELECTRON | - |
dc.subject | ABSORPTION | - |
dc.subject | TRANSISTORS | - |
dc.subject | EXCITONS | - |
dc.subject | CARRIERS | - |
dc.title | Interplay between many body effects and Coulomb screening in the optical bandgap of atomically thin MoS2 | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c7nr01834g | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.9, no.30, pp.10647 - 10652 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000406847800013 | - |
dc.identifier.scopusid | 2-s2.0-85027032338 | - |
dc.citation.endPage | 10652 | - |
dc.citation.number | 30 | - |
dc.citation.startPage | 10647 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | Kim, Nammee | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | STRONG PHOTOLUMINESCENCE ENHANCEMENT | - |
dc.subject.keywordPlus | SEMICONDUCTOR QUANTUM-WELLS | - |
dc.subject.keywordPlus | GAP RENORMALIZATION | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | VALLEY POLARIZATION | - |
dc.subject.keywordPlus | ELECTRON-ELECTRON | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EXCITONS | - |
dc.subject.keywordPlus | CARRIERS | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Soongsil University Library 369 Sangdo-Ro, Dongjak-Gu, Seoul, Korea (06978)02-820-0733
COPYRIGHT ⓒ SOONGSIL UNIVERSITY, ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.