Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling
DC Field | Value | Language |
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dc.contributor.author | Choi, Yongsuk | - |
dc.contributor.author | Kang, Junmo | - |
dc.contributor.author | Jariwala, Deep | - |
dc.contributor.author | Wells, Spencer A. | - |
dc.contributor.author | Kang, Moon Sung | - |
dc.contributor.author | Marks, Tobin J. | - |
dc.contributor.author | Hersam, Mark C. | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.date.available | 2018-05-08T14:41:44Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2017-05-09 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6371 | - |
dc.description.abstract | Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption. | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | CHEMISTRY OF MATERIALS | - |
dc.subject | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | SINGLE-LAYER MOS2 | - |
dc.subject | BLACK PHOSPHORUS | - |
dc.subject | GRAPHENE TRANSISTORS | - |
dc.subject | GATE | - |
dc.subject | MOBILITY | - |
dc.subject | DIELECTRICS | - |
dc.subject | TRANSPORT | - |
dc.subject | CONTACTS | - |
dc.title | Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.chemmater.7b00573 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.29, no.9, pp.4008 - 4013 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000401221700022 | - |
dc.identifier.scopusid | 2-s2.0-85019066596 | - |
dc.citation.endPage | 4013 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 4008 | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 29 | - |
dc.contributor.affiliatedAuthor | Kang, Moon Sung | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SINGLE-LAYER MOS2 | - |
dc.subject.keywordPlus | BLACK PHOSPHORUS | - |
dc.subject.keywordPlus | GRAPHENE TRANSISTORS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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