Comparison of Methods for Fabricating an SFFT with Two-Channels Using ICP and AFM

Abstract

In this paper, we fabricated superconducting flux flow transistors (SFFTs) with two channels using inductively coupled plasma (ICP) and atomic force microscope (AFM) equipment. The two-channels consisted of a weak-link, which had a very important effect on transistor operation characteristics. In addition, the characteristics of the channels were investigated using AFM surface analysis. Based on the fabrication conditions in the channel, we derived the current-voltage equation corresponding to varying gate currents. These results complemented the theoretically equivalent model of the current-voltage equation of an SFFT with two channels. The channel was fabricated by the AFM oxidization process and transformed into an insulator. It has been demonstrated by Raman spectroscopy analysis that the channel is etched such as when using ICP equipment. In this study, we compare the current-voltage characteristics of two channel SFFTs fabricated by two different methods and describe the strengths and weaknesses of the two manufacturing methods.