AlXGa1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire
DC Field | Value | Language |
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dc.contributor.author | Akter, Afroja | - |
dc.contributor.author | Yoo, Geonwook | - |
dc.contributor.author | Kim, Sangin | - |
dc.contributor.author | Baac, Hyoung Won | - |
dc.contributor.author | Heo, Junseok | - |
dc.date.available | 2018-05-08T14:43:01Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6377 | - |
dc.description.abstract | The electronic intraband absorption in InGaN nanodisks embedded in GaN nanowires with several kinds of cladding materials and without cladding was theoretically investigated. The cladding layer was 5 nm thick, and AlN, GaN, and Al0.4Ga0.6N were considered. The strain distribution, internal electric field, and intraband absorption in the nanodisks were calculated using the elastic energy minimization method and the single-band Schrodinger equation implemented in Nextnano3. For a plain nanowire without cladding, an inhomogeneous strain in the disk caused a piezoelectric field and deformation potential, yielding band-bending and a higher electron probability density in the periphery of the disk. An InGaN nanodisk embedded in a cladding GaN nanowire exhibited a higher intraband absorption. The case of the GaN cladding was optimal owing to the homogeneous surroundings of the disk. | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.subject | MULTIPLE-QUANTUM WELLS | - |
dc.subject | MU-M | - |
dc.subject | INTERSUBBAND ABSORPTION | - |
dc.subject | INFRARED PHOTODETECTORS | - |
dc.subject | WAVELENGTH RANGE | - |
dc.subject | SUPERLATTICES | - |
dc.subject | TRANSITION | - |
dc.subject | LASERS | - |
dc.subject | DOTS | - |
dc.title | AlXGa1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2017.14060 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3279 - 3284 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000397855000070 | - |
dc.identifier.scopusid | 2-s2.0-85015360505 | - |
dc.citation.endPage | 3284 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3279 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Yoo, Geonwook | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Intraband | - |
dc.subject.keywordAuthor | Absorption | - |
dc.subject.keywordAuthor | Nanowire | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordPlus | MULTIPLE-QUANTUM WELLS | - |
dc.subject.keywordPlus | MU-M | - |
dc.subject.keywordPlus | INTERSUBBAND ABSORPTION | - |
dc.subject.keywordPlus | INFRARED PHOTODETECTORS | - |
dc.subject.keywordPlus | WAVELENGTH RANGE | - |
dc.subject.keywordPlus | SUPERLATTICES | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | DOTS | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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