Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates
DC Field | Value | Language |
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dc.contributor.author | Dathbun, Ajjiporn | - |
dc.contributor.author | Kim, Youngchan | - |
dc.contributor.author | Kim, Seongchan | - |
dc.contributor.author | Yoo, Youngjae | - |
dc.contributor.author | Kang, Moon Sung | - |
dc.contributor.author | Lee, Changgu | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.date.available | 2018-05-08T14:43:47Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6390 | - |
dc.description.abstract | We demonstrated the fabrication of large-area ReS2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS2 semiconductor, channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. Anion gel with an, ultrahigh capacitance effectively,gated the ReS2 channel at a low voltage, below 2 V, through a coplanar gate: The.contact resistance of the ion gel-gated ReS2 transistors with graphene electrodes decreased dramatically compared with the SiO2-devices prepared with Cr electrodes, The resulting transisiors exhibited good device performance, including a maximum electron mobility of 0:9 cm(2)/(V s) and an on/off current ratio exceeding 10(4). NMOS logic devices, such as NOT, NAND, and NOR, gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices. to complex logic circuits. The large-area synthesis of ReS2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanornaterials. | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | MOLYBDENUM-DISULFIDE | - |
dc.subject | COMPLEMENTARY INVERTERS | - |
dc.subject | GRAPHENE TRANSISTORS | - |
dc.subject | GRAIN-BOUNDARIES | - |
dc.subject | MOS2 TRANSISTORS | - |
dc.subject | HIGH-FREQUENCY | - |
dc.subject | LAYERED RES2 | - |
dc.title | Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.nanolett.7b00315 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.17, no.5, pp.2999 - 3005 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000401307300038 | - |
dc.identifier.scopusid | 2-s2.0-85019227565 | - |
dc.citation.endPage | 3005 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2999 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Kang, Moon Sung | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | ReS2 | - |
dc.subject.keywordAuthor | chemical vapor deposition (CVD) | - |
dc.subject.keywordAuthor | transistor | - |
dc.subject.keywordAuthor | large area | - |
dc.subject.keywordAuthor | logic gate | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
dc.subject.keywordPlus | COMPLEMENTARY INVERTERS | - |
dc.subject.keywordPlus | GRAPHENE TRANSISTORS | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-FREQUENCY | - |
dc.subject.keywordPlus | LAYERED RES2 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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