Wafer-scale Thermodynamically Stable GaN Nanorods via TwoStep Self-Limiting Epitaxy for Optoelectronic Applications
- Authors
- Kum, Hyun; Seong, Han-Kyu; Lim, Wantae; Chun, Daemyung; Kim, Young-il; Park, Youngsoo; Yoo, Geonwook
- Issue Date
- 18-Jan-2017
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.7
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 7
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6477
- DOI
- 10.1038/srep40893
- ISSN
- 2045-2322
- Abstract
- We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visible extended defects over a 100 mm sapphire (Al2O3) wafer. An ex-situ study of the growth morphology as a function of growth time for the two self-limiting steps elucidate the growth dynamics, which show that formation of an Ehrlich-Schwoebel barrier and preferential growth in the c-plane direction governs the growth process. This process allows monolithic formation of dimensionally uniform nanowires on templates with varying filling matrix patterns for a variety of novel electronic and optoelectronic applications. A color tunable phosphor-free white light LED with a coaxial architecture is fabricated as a demonstration of the applicability of these nanorods grown by TSSLG.
- Files in This Item
-
Go to Link
- Appears in
Collections - College of Information Technology > ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.