The doping mechanism and electrical performance of polyethylenimine-doped MoS2 transistor
DC Field | Value | Language |
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dc.contributor.author | Hong, S. | - |
dc.contributor.author | Yoo, G. | - |
dc.contributor.author | Kim, D.H. | - |
dc.contributor.author | Song, W.G. | - |
dc.contributor.author | Le, O.K. | - |
dc.contributor.author | Hong, Y.K. | - |
dc.contributor.author | Takahashi, K. | - |
dc.contributor.author | Omkaram, I. | - |
dc.contributor.author | Son, D.N. | - |
dc.contributor.author | Kim, S. | - |
dc.date.available | 2018-05-09T01:50:11Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2017-03 | - |
dc.identifier.issn | 1862-6351 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/7303 | - |
dc.description.abstract | We present a systematic investigation of polyethylenimine (PEI) doping mechanism and its effects on the multilayer MoS2 field effect transistors (FETs). The threshold voltages of MoS2 FETs before (i.e., pristine) and PEI doping are observed at 3.7 and 0.72 V, respectively. This negative threshold voltage shift clearly reveals that the PEI molecules effectively act as n-type dopants. The electrical properties are improved by absorption of PEI molecules onto MoS2 channel because the width of Schottky barrier (SB) is narrowed by the induced interfacial dipole between PEI molecules and MoS2 layers. Through the density function theory (DFT) calculation and X-ray photoelectron spectroscopy (XPS) analysis, we confirm that formation of MoN bond generates new energy state into the bandgap. Consequently, the hole carriers can easily tunnel through the barrier under negative gate voltage. Furthermore, PEI doping improve photoresponsivity and time-resolved photo-switching characteristics because of the new energy state. Our studies demonstrate the PEI doping method has a great potential for improving electrical and optical properties of MoS2-based devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.relation.isPartOf | Physica Status Solidi (C) Current Topics in Solid State Physics | - |
dc.subject | Density functional theory | - |
dc.subject | Doping (additives) | - |
dc.subject | Field effect transistors | - |
dc.subject | Molecules | - |
dc.subject | Molybdenum compounds | - |
dc.subject | Multilayers | - |
dc.subject | Optical properties | - |
dc.subject | Optoelectronic devices | - |
dc.subject | Polyetherimides | - |
dc.subject | Probability density function | - |
dc.subject | Schottky barrier diodes | - |
dc.subject | Threshold voltage | - |
dc.subject | Transistors | - |
dc.subject | Density function theory calculations | - |
dc.subject | Electrical and optical properties | - |
dc.subject | Electrical performance | - |
dc.subject | Field effect transistor (FETs) | - |
dc.subject | N-Doping | - |
dc.subject | Negative gate voltages | - |
dc.subject | Switching characteristics | - |
dc.subject | Threshold voltage shifts | - |
dc.subject | X ray photoelectron spectroscopy | - |
dc.title | The doping mechanism and electrical performance of polyethylenimine-doped MoS2 transistor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssc.201600262 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Physica Status Solidi (C) Current Topics in Solid State Physics, v.14, no.3-4 | - |
dc.description.journalClass | 1 | - |
dc.identifier.scopusid | 2-s2.0-85014712352 | - |
dc.citation.number | 3-4 | - |
dc.citation.title | Physica Status Solidi (C) Current Topics in Solid State Physics | - |
dc.citation.volume | 14 | - |
dc.contributor.affiliatedAuthor | Yoo, G. | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | multilayer MoS2 | - |
dc.subject.keywordAuthor | n-doping | - |
dc.subject.keywordAuthor | optoelectronic device | - |
dc.subject.keywordAuthor | PEI | - |
dc.subject.keywordAuthor | transistor | - |
dc.description.journalRegisteredClass | scopus | - |
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