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An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes
- Authors
- Kim, Jong Su; Kim, Beom Joon; Choi, Young Jin; Lee, Moo Hyung; Kang, Moon Sung; Cho, Jeong Ho
- Issue Date
- 22-Jun-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- doping; graphene; injection barriers; organic semiconductors; vertical transistors
- Citation
- ADVANCED MATERIALS, v.28, no.24, pp.4803 - 4810
- Journal Title
- ADVANCED MATERIALS
- Volume
- 28
- Number
- 24
- Start Page
- 4803
- End Page
- 4810
- ISSN
- 0935-9648
- Abstract
- High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.
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