Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures
- Authors
- Choi, Yongsuk; Kang, Junmo; Jariwala, Deep; Kang, Moon Sung; Marks, Tobin J.; Hersam, Mark C.; Cho, Jeong Ho
- Issue Date
- 18-May-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- graphene; ion gels; low power; Schottky barrier; transition-metal dichalcogenides; vertical transistors
- Citation
- ADVANCED MATERIALS, v.28, no.19, pp.3742 - 3748
- Journal Title
- ADVANCED MATERIALS
- Volume
- 28
- Number
- 19
- Start Page
- 3742
- End Page
- 3748
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/7606
- DOI
- 10.1002/adma.201506450
- ISSN
- 0935-9648
- Abstract
- Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm(-2)) and on/off current ratios (>10(4)) in a narrow voltage window (<3 V).
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Collections - College of Engineering > Department of Chemical Engineering > 1. Journal Articles
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