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Cited 59 time in webofscience Cited 55 time in scopus
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Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Authors
Choi, YongsukKang, JunmoJariwala, DeepKang, Moon SungMarks, Tobin J.Hersam, Mark C.Cho, Jeong Ho
Issue Date
18-May-2016
Publisher
WILEY-V C H VERLAG GMBH
Keywords
graphene; ion gels; low power; Schottky barrier; transition-metal dichalcogenides; vertical transistors
Citation
ADVANCED MATERIALS, v.28, no.19, pp.3742 - 3748
Journal Title
ADVANCED MATERIALS
Volume
28
Number
19
Start Page
3742
End Page
3748
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/7606
DOI
10.1002/adma.201506450
ISSN
0935-9648
Abstract
Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm(-2)) and on/off current ratios (>10(4)) in a narrow voltage window (<3 V).
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