Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Hee Yeon | - |
dc.contributor.author | Park, Han-Wool | - |
dc.contributor.author | Kim, Soo Jin | - |
dc.contributor.author | Hong, Jae-Min | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Kimc, Do Hwan | - |
dc.contributor.author | Lim, Jung Ah | - |
dc.date.available | 2018-05-09T04:47:42Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2016-02-14 | - |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/7689 | - |
dc.description.abstract | Here we demonstrated the split-second crystallization of a liquid-crystalline conjugated polymer semiconductor induced by irradiation with intense pulsed white light (IPWL) for the efficient improvement of electrical properties of flexible thin film transistors. A few seconds of IPWL irradiation of poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12) thin films generated heat energy through the photo-thermal effect, leading to the crystallization of PQTBTz-C12 and formation of nodule-like nanostructures. The IPWL-induced crystallization of PQTBTz-C12 resulted in a threefold improvement in the field-effect mobility of thin film transistors compared to as-prepared devices. The conformational change of the PQTBTz-C12 chains was found to be strongly related to the irradiation fluence. As a proof-of-concept, the IPWL treatment was successfully applied to the PQTBTz-C12 layer in flexible transistors based on plastic substrates. The performance of these flexible devices was significantly improved after only 0.6 s of IPWL treatment, without deformation of the plastic substrate. | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SOLAR-CELLS | - |
dc.subject | OXIDE | - |
dc.subject | COPOLYMERS | - |
dc.subject | DEPOSITION | - |
dc.subject | SUBSTRATE | - |
dc.subject | INK | - |
dc.title | Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c5cp06989k | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.6, pp.4627 - 4634 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000369509100043 | - |
dc.identifier.scopusid | 2-s2.0-84957536240 | - |
dc.citation.endPage | 4634 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 4627 | - |
dc.citation.title | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.volume | 18 | - |
dc.contributor.affiliatedAuthor | Kimc, Do Hwan | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | COPOLYMERS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | INK | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Soongsil University Library 369 Sangdo-Ro, Dongjak-Gu, Seoul, Korea (06978)02-820-0733
COPYRIGHT ⓒ SOONGSIL UNIVERSITY, ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.