Direct analytical method of contact position effects on the energy-level alignments at organic semiconductor/electrode interfaces using photoemission spectroscopy combined with Ar gas cluster ion beam sputtering
DC Field | Value | Language |
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dc.contributor.author | Yun, Dong-Jin | - |
dc.contributor.author | Chung, JaeGwan | - |
dc.contributor.author | Kim, Seong Heon | - |
dc.contributor.author | Kim, Yongsu | - |
dc.contributor.author | Park, SungHoon | - |
dc.contributor.author | Seol, Minsu | - |
dc.contributor.author | Heo, Sung | - |
dc.date.available | 2018-05-09T07:19:12Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2015-11-20 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/8575 | - |
dc.description.abstract | Poly(3, 4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) is one of the most widely used conducting organic electrodes owing to its outstanding optical/electrical properties and high work function. Because its work function depends significantly on the molecular arrangements between PEDOT and PSS molecules on the surface, the contact position of PEDOT: PSS films on organic semiconductors (OSCs) must also be an essential consideration. However, existing analysis methods based on in situ deposition/analysis are limited in their ability to accurately investigate the electronic structures of the buried interface regions under the solution-processed electrode or OSC layer in organic devices. Therefore, to overcome such limitations, we propose a top-down method based on photoemission spectroscopy analysis combined with Ar gas cluster ion beam (GCIB) sputtering. Through this method, both energy-level alignments and molecular distributions at various OSC/electrode interfaces can be successfully characterized without reference to any deposition process. | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.subject | WORK FUNCTION | - |
dc.subject | FILMS | - |
dc.subject | CONDUCTIVITY | - |
dc.subject | MORPHOLOGY | - |
dc.subject | PSS | - |
dc.title | Direct analytical method of contact position effects on the energy-level alignments at organic semiconductor/electrode interfaces using photoemission spectroscopy combined with Ar gas cluster ion beam sputtering | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0957-4484/26/46/465704 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.26, no.46 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000366176500014 | - |
dc.identifier.scopusid | 2-s2.0-84947586065 | - |
dc.citation.number | 46 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 26 | - |
dc.contributor.affiliatedAuthor | Park, SungHoon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | energy level alignment | - |
dc.subject.keywordAuthor | organic semiconductor/electrode interface | - |
dc.subject.keywordAuthor | Ar gas cluster ion beam | - |
dc.subject.keywordAuthor | photoemission spectroscopy | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | PSS | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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