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Cited 40 time in webofscience Cited 39 time in scopus
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Electrolyte-Gated Graphene Schottky Barrier Transistors

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dc.contributor.authorKim, Beom Joon-
dc.contributor.authorHwang, Euyheon-
dc.contributor.authorKang, Moon Sung-
dc.contributor.authorCho, Jeong Ho-
dc.date.available2018-05-09T07:21:11Z-
dc.date.created2018-04-17-
dc.date.issued2015-10-21-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/8615-
dc.description.abstractA new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p-and n-type characteristics under low-voltage operation (< 1 V), yielding high current densities (> 100 mA cm(-2)) and on/off current ratios (> 10(3)).-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.relation.isPartOfADVANCED MATERIALS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectLOW-VOLTAGE-
dc.subjectHETEROSTRUCTURES-
dc.subjectGEL-
dc.subjectELECTRONICS-
dc.subjectDIELECTRICS-
dc.subjectINVERTERS-
dc.titleElectrolyte-Gated Graphene Schottky Barrier Transistors-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201502020-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.27, no.39, pp.5875 - 5881-
dc.description.journalClass1-
dc.identifier.wosid000363205200003-
dc.identifier.scopusid2-s2.0-84944280773-
dc.citation.endPage5881-
dc.citation.number39-
dc.citation.startPage5875-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume27-
dc.contributor.affiliatedAuthorKang, Moon Sung-
dc.type.docTypeArticle-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorion gels-
dc.subject.keywordAuthorlow-voltage operations-
dc.subject.keywordAuthororganic semiconductors-
dc.subject.keywordAuthorSchottky barrier transistors-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusLOW-VOLTAGE-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusGEL-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusINVERTERS-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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