Binary mask estimation for noise reduction based on instantaneous SNR estimation using Bayes risk minimisation
DC Field | Value | Language |
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dc.contributor.author | Kim, Gibak | - |
dc.date.available | 2018-05-09T07:39:47Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2015-03-19 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/8778 | - |
dc.description.abstract | In p-GaN gate AlGaN/GaN power devices, the p-GaN etching process to define the gate region is critical to device performance. In some cases, the remained p-GaN in the ungated region can exist as a result of under-etching, and can act like a charge reservoir in the p-GaN gate power device. In this reported work, the effect of this remained p-GaN layer is investigated for the first time. The main effect of the thick remained p-GaN on the ungated region is the increments of turn-off energy loss (E-off) in spite of the similar turn-on energy loss (E-on). This is related to the hole trapping in the remained p-GaN region which is observed by the change of turn-off gate voltages. | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.subject | SPEECH ENHANCEMENT | - |
dc.title | Binary mask estimation for noise reduction based on instantaneous SNR estimation using Bayes risk minimisation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1049/el.2014.4448 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.51, no.6, pp.526 - 527 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000351271700051 | - |
dc.identifier.scopusid | 2-s2.0-84924657680 | - |
dc.citation.endPage | 527 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 526 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Kim, Gibak | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | power semiconductor devices | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | etching | - |
dc.subject.keywordAuthor | gate power devices | - |
dc.subject.keywordAuthor | energy loss turn-off | - |
dc.subject.keywordAuthor | etching process | - |
dc.subject.keywordAuthor | gate region | - |
dc.subject.keywordAuthor | device performance | - |
dc.subject.keywordAuthor | hole trapping | - |
dc.subject.keywordAuthor | turn-off gate voltages | - |
dc.subject.keywordAuthor | AlGaN-GaN | - |
dc.subject.keywordPlus | SPEECH ENHANCEMENT | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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