Electroless Chemical Grafting of Nitrophenyl Groups on n-Doped Hydrogenated Amorphous Silicon Surfaces
- Authors
- Kim, Chulki; Oh, Kiwon; Han, Seunghee; Kim, Kyungkon; Kim, Il Won; Kim, Heesuk
- Issue Date
- Aug-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Amorphous Silicon Surface; Organic Monolayer; Spontaneous Reaction; XPS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.8, pp.6309 - 6313
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 8
- Start Page
- 6309
- End Page
- 6313
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/9975
- DOI
- 10.1166/jnn.2014.8449
- ISSN
- 1533-4880
- Abstract
- The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si: H) surfaces without external ultraviolet, thermal, or electrochemical energy was investigated. Clean n-doped a-Si: H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si: H thin film with PNBD self-terminates without polymerization after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2x10(15)/cm(2). These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si: H thin films is an attractive pathway toward forming interfaces between a-Si: H and organic layers under ambient conditions.
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