Transparent, Low-Power Pressure Sensor Matrix Based on Coplanar-Gate Graphene Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sun, Qijun | - |
dc.contributor.author | Kim, Do Hwan | - |
dc.contributor.author | Park, Sang Sik | - |
dc.contributor.author | Lee, Nae Yoon | - |
dc.contributor.author | Zhang, Yu | - |
dc.contributor.author | Lee, Jung Heon | - |
dc.contributor.author | Cho, Kilwon | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.date.available | 2018-05-09T11:05:11Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2014-07-16 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/9993 | - |
dc.description.abstract | A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1), and excellent mechanical durability over 2500 cycles. | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | ELECTRONIC SKIN APPLICATIONS | - |
dc.subject | LARGE-AREA | - |
dc.subject | ARTIFICIAL SKIN | - |
dc.subject | DIELECTRICS | - |
dc.subject | DEVICES | - |
dc.subject | DESIGN | - |
dc.subject | TOUCH | - |
dc.title | Transparent, Low-Power Pressure Sensor Matrix Based on Coplanar-Gate Graphene Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.201400918 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.26, no.27, pp.4735 - + | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000339661100020 | - |
dc.identifier.scopusid | 2-s2.0-84904458739 | - |
dc.citation.endPage | + | - |
dc.citation.number | 27 | - |
dc.citation.startPage | 4735 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 26 | - |
dc.contributor.affiliatedAuthor | Kim, Do Hwan | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | coplanar gate graphene transistor | - |
dc.subject.keywordAuthor | electronic skin | - |
dc.subject.keywordAuthor | low power | - |
dc.subject.keywordAuthor | pressure sensors active matrix | - |
dc.subject.keywordAuthor | transparency | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRONIC SKIN APPLICATIONS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | ARTIFICIAL SKIN | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | TOUCH | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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