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Cited 137 time in webofscience Cited 140 time in scopus
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Transparent, Low-Power Pressure Sensor Matrix Based on Coplanar-Gate Graphene Transistors

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DC FieldValueLanguage
dc.contributor.authorSun, Qijun-
dc.contributor.authorKim, Do Hwan-
dc.contributor.authorPark, Sang Sik-
dc.contributor.authorLee, Nae Yoon-
dc.contributor.authorZhang, Yu-
dc.contributor.authorLee, Jung Heon-
dc.contributor.authorCho, Kilwon-
dc.contributor.authorCho, Jeong Ho-
dc.date.available2018-05-09T11:05:11Z-
dc.date.created2018-04-17-
dc.date.issued2014-07-16-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/9993-
dc.description.abstractA novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1), and excellent mechanical durability over 2500 cycles.-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.relation.isPartOfADVANCED MATERIALS-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectELECTRONIC SKIN APPLICATIONS-
dc.subjectLARGE-AREA-
dc.subjectARTIFICIAL SKIN-
dc.subjectDIELECTRICS-
dc.subjectDEVICES-
dc.subjectDESIGN-
dc.subjectTOUCH-
dc.titleTransparent, Low-Power Pressure Sensor Matrix Based on Coplanar-Gate Graphene Transistors-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201400918-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.26, no.27, pp.4735 - +-
dc.description.journalClass1-
dc.identifier.wosid000339661100020-
dc.identifier.scopusid2-s2.0-84904458739-
dc.citation.endPage+-
dc.citation.number27-
dc.citation.startPage4735-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume26-
dc.contributor.affiliatedAuthorKim, Do Hwan-
dc.type.docTypeArticle-
dc.subject.keywordAuthorcoplanar gate graphene transistor-
dc.subject.keywordAuthorelectronic skin-
dc.subject.keywordAuthorlow power-
dc.subject.keywordAuthorpressure sensors active matrix-
dc.subject.keywordAuthortransparency-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusELECTRONIC SKIN APPLICATIONS-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusARTIFICIAL SKIN-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusTOUCH-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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