ScholarWorks@Soongsil University: Chung, Jin Seok

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Chung, Jin Seok (정진석)

College of Natural Sciences (Department of Physics)

Research Area: 물리학, 응집물질물리, physics, condensed matter physics

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Eu3+:5||electroplating:4||Spectroscopic ellipsometry:3||Ferroelectric:3||permalloy:3||ferroelectric materials:3||Indium tin oxide:3||energy gap:3||Excimer laser annealing:2||BiFeO3:2||strain gradient:2||strontium compounds:2||Switching current measurement:2||Piezoresponse force microscopy:2||Temperature dependence:2||annealing:2||ferroelectric:2||Solgel:2||ferroelectric thin films:2||organic additive:2||Thin film:2||전기도금:2||Domain:2||giant magnetoimpedance:2||Upconversion:2||Codoping:2||CaHfO3:2||pulsed laser deposition:2||BaTiO3:2||defect states:2||interface engineering:2||Perovskites:2||Eu/Tm:1||Fatigue:1||Gammaray irradiation:1||Ge2Sb2Te5 (GST):1||H+ implantation:1||Ho3+/Yb3+:1||IIVI semiconductors:1||Judd–ofelt (JO) analysis:1||Juddofelt parameters:1||KBaPO4:1||Lattice rotations:1||LiBaPO4:1||Luminescence:1||Magnetic property:1||NaBaPO4:1||NanoCrystals:1||Nanocrystals:1||Nitride semiconductors:1||Numerical simulation:1||Optical constants:1||Optical properties:1||Optical property:1||Oxide:1||Parasitic phase:1||Perovskite zirconate:1||Photoluminescence:1||Physics education:1||Polarity:1||Pulsed laser deposition:1||Rare Earth Ion:1||Rareearths:1||Red emission:1||Red phosphor:1||Rietveld refinement:1||Schottky barriers:1||Secondary recrystallization:1||Site dependence:1||Sm3+:1||Spectroscopy:1||Sputtering:1||Sr2LaNbO6:1||SrHfO3:1||SrIrO3:1||SrZrO3:1||Strain:1||Structural property:1||Structure:1||Substitution site:1||Synchrotron Xray microdiffraction:1||Thermal annealing:1||Thin films:1||Transparent conducting substrate:1||Ultrathin ferroelectric film:1||Valence state change:1||Visiblelight emission:1||White Emission:1||Xray absorption spectra:1||Xray microbeam:1||Xray microdiffraction:1||YBO3:1||Yb3+:1||ab initio calculations:1||additive:1||amorphous substrate:1||anomalous Hall effect:1||bismuth compounds:1||cobalt:1||coded aperture:1||coercivity:1||composite barrier:1||copper:1||crystal structure:1||defect engineering:1||dielectric:1||dielectric thin films:1||diffraction tomography:1||distortion correction:1||electric domains:1||electrical resistivity:1||epitaxial films:1||epitaxial thin film:1||epitaxial thin films:1||ferroelectric critical thickness:1||ferroelectric tunnel junction:1||ferroelectricity:1||flexoelectric:1||flexoelectric effect:1||gallium nitride:1||growth models:1||hightemperature effects:1||hybrid heterostructure:1||indium compounds:1||largesize graphene film:1||laser epitaxy:1||light transmission:1||lightemitting diode:1||magnesium compounds:1||magnetic alloys:1||magnetic materials:1||magnetic multilayers:1||magnetism:1||magnetoimpedance:1||manganites:1||microdiffraction:1||microprobe:1||multiferroics:1||nanoscale inhomogeneity of perovskite SrRuO:1||organic additives:1||oxide ferroelectrics:1||oxide heterostructure:1||permeability:1||permittivity:1||photoluminescence:1||piezoelectric:1||polymorphic nanodomains:1||pulsed laser epitaxy:1||rectification:1||saccharin:1||selfpolarization:1||semiconductor heterojunctions:1||semiconductor materials:1||semiconductor thin films:1||sputter deposition:1||thermodynamic surface stability:1||tunneling electroresistance:1||vacancies (crystal):1||wide band gap semiconductors:1||zinc compounds:1||거대자기임피던스:1||결합 진동자:1||물리 교육:1||보자력:1||사카린:1||수치 시뮬레이션:1||유기첨가제:1||자기임피던스:1||첨가제:1||투자율:1||퍼말로이:1||(3):1||퍼멀로이:1||Abnormal grain growth:1||Ambient dependence:1||Ambient dependent annealing:1||Amorphous phase:1||Annealing:1||Ba2LaNbO6:1||BaZrO3:1||BiFeO3 film:1||CCD:1||Ca2LaNbO6:1||CaHfO 3:1||CaZrO3:1||Ce 3+ /Tb 3+:1||CoCu alloy:1||Combustion Method:1||Concentrationdependence:1||Conical structure:1||Coupled oscillators:1||Crystalline phase:1||Crystallographic structure:1||Cuion implantation:1||CuGaSe2 film:1||Dislocation boundaries:1||Dislocations:1||Double perovskite:1||Electrodeposition:1||Ellipsometry:1||Energy transfer:1||Er3+:1||ErMnO3:1||Eu ions:1||

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