ScholarWorks@Soongsil University: Lee, Woongkyu

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Lee, Woongkyu (이웅규)

College of Engineering (Department of Materials Science and Engineering)

Research Area: 재료공학, 반도체, Materials Science and Engineering, Semiconductor

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atomic layer deposition:6||Y2O3:2||ZnO:2||DRAM capacitors:2||SrTiO3:2||Intense pulsed light annealing:1||MD simulations:1||MOS capacitors:1||O3 treatment:1||Oxide semiconductor:1||Ptype:1||Ru:1||SnTiO2:1||SnO:1||Thinfilm transistor:1||TiO2:1||Xray spectroscopy:1||Ydoped TiO2:1||ZrO2/Al2O3/ZrO2:1||amorphous oxide:1||amorphous oxide semiconductors:1||chargetrap flash:1||crosslinking:1||device lifetime:1||dielectric constant:1||diethylzinc:1||donor (D)pibridge acceptor (A) organic sensitizers:1||electrodes:1||erase operation:1||high mobility:1||highk dielectrics:1||indium oxide:1||interfaces:1||interlayers:1||leakage current:1||lightemitting diodes:1||multipixel:1||multisensitization:1||oxygen scavenging effect:1||patterning:1||perovskite:1||perovskites:1||photolithography:1||photovoltaic cell:1||porphyrin:1||pulsed laser deposition:1||quantum dot:1||quantum dot lightemitting diodes (QDLEDs):1||quantum dots:1||seed layers:1||solidstate hole conductor:1||solution processes:1||superlattice:1||technology computeraided design simulation:1||ternary highk oxide:1||thin film transistor:1||transparent conducting oxides:1||twostep growth:1||Aldoping:1||zinc tin oxide:1||Atomic layer deposition:1||Cs2SnI6:1||Ge MOS capacitor:1||Ge substrates:1||

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