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Direct growth of graphene nanopatches on graphene sheets for highly conductive thin film applications

Authors
Song, WooseokKim, Ki WoongChang, Sung-JinPark, Tae JungKim, Sung HoJung, Min WookLee, GeonheeMyung, SungLim, JongsunLee, Sun SukAn, Ki-Seok
Issue Date
Jan-2015
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.4, pp 725 - 728
Pages
4
Journal Title
JOURNAL OF MATERIALS CHEMISTRY C
Volume
3
Number
4
Start Page
725
End Page
728
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/11364
DOI
10.1039/c4tc02283a
ISSN
2050-7526
2050-7534
Abstract
Graphene nanopatches (GNs) on graphene films grown by chemical vapor deposition (CVD) were synthesized by Ni nanoparticle assembly and subsequent CVD growth to enhance their electrical conductivity. As a result, the sheet resistance of the hexagonally shaped GN-assembled graphene films decreased from 681.7 + 11.2 to 527.2 + 47.0 Omega sq(-1) with 97.9% transparency. This improvement in electrical conductivity was the result of p-type doping of the GNs on graphene films and the generation of additional charge carrier conducting paths to diminish defect scattering, which was a result of the enhanced extracted-hole mobility of the GN-assembled graphene films.
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