Thermoelectric property of Fe3O4 thin films grown onto the SiO2 (250 nm)/Si and c-Al2O3 (0001) substrate at 573 K using pulsed laser deposition
- Authors
- Kim, Jin-A; Lee, Sang-Kwon; Yoon, Soon-Gil
- Issue Date
- Dec-2014
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Fe3O4 thin films; SiO2/Si (001) substrate; c-Al2O3 single-crystal substrate; Thermoelectric properties; Pulsed laser deposition
- Citation
- SENSORS AND ACTUATORS B-CHEMICAL, v.204, pp 622 - 628
- Pages
- 7
- Journal Title
- SENSORS AND ACTUATORS B-CHEMICAL
- Volume
- 204
- Start Page
- 622
- End Page
- 628
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/11503
- DOI
- 10.1016/j.snb.2014.08.005
- ISSN
- 0925-4005
0925-4005
- Abstract
- Fe3O4 thin films were grown at 573K onto SiO2/Si (0 0 1) and c-Al2O3 (0 0 0 1) single-crystal substrates using pulsed laser deposition in order to investigate the effect of thermoelectric properties on substrates. The thermoelectric properties of the Fe3O4 films were observed above 300 K. An increase in the thickness of the Fe3O4 films grown onto a SiO2 (250 nm)/Si (0 0 1) substrate produced a decrease in the Seebeck coefficient and it was approached to the absolute value (similar to 60 mu V/K) observed at the films grown on c-Al2O3 substrate as the SiO2 thickness was increased from 250 to 750 nm. The Seebeck coefficient of the FeO4 films was definitely depended on the Si (0 0 1) substrate. (C) 2014 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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