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Cited 24 time in webofscience Cited 24 time in scopus
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Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

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dc.contributor.authorBaeg, Kang-Jun-
dc.contributor.authorKim, Myung-Gil-
dc.contributor.authorSong, Charles K.-
dc.contributor.authorYu, Xinge-
dc.contributor.authorFacchetti, Antonio-
dc.contributor.authorMarks, Tobin J.-
dc.date.available2019-03-08T20:56:33Z-
dc.date.issued2014-11-
dc.identifier.issn0935-9648-
dc.identifier.issn1521-4095-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/11599-
dc.description.abstractA solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleCharge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201401354-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.26, no.42, pp 7170 - 7177-
dc.description.isOpenAccessN-
dc.identifier.wosid000344783300003-
dc.identifier.scopusid2-s2.0-84941092573-
dc.citation.endPage7177-
dc.citation.number42-
dc.citation.startPage7170-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume26-
dc.type.docTypeArticle-
dc.publisher.location독일-
dc.subject.keywordAuthordata storage-
dc.subject.keywordAuthoramorphous oxides-
dc.subject.keywordAuthorsemiconductors-
dc.subject.keywordAuthorthin films-
dc.subject.keywordAuthorself-assembly-
dc.subject.keywordAuthordielectrics-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusFLOATING-GATE MEMORY-
dc.subject.keywordPlusGALLIUM-ZINC-OXIDE-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusLOW-TEMPERATURE-
dc.subject.keywordPlusTHERMAL-DECOMPOSITION-
dc.subject.keywordPlusEFFECT MOBILITY-
dc.subject.keywordPlusSOL-GEL-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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