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Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites
- Authors
- Baeg, Kang-Jun; Kim, Myung-Gil; Song, Charles K.; Yu, Xinge; Facchetti, Antonio; Marks, Tobin J.
- Issue Date
- Nov-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- data storage; amorphous oxides; semiconductors; thin films; self-assembly; dielectrics
- Citation
- ADVANCED MATERIALS, v.26, no.42, pp 7170 - 7177
- Pages
- 8
- Journal Title
- ADVANCED MATERIALS
- Volume
- 26
- Number
- 42
- Start Page
- 7170
- End Page
- 7177
- ISSN
- 0935-9648
1521-4095
- Abstract
- A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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