In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs
DC Field | Value | Language |
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dc.contributor.author | Kim, Kyung Tae | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.available | 2019-03-08T21:39:08Z | - |
dc.date.issued | 2014-08 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/12005 | - |
dc.description.abstract | Transparent and highly conductive indium-zinc oxide (IZO) was utilized as a metallic capping layer in solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to enhance their electrical performance. By applying an in-situ metallic oxide (IZO) as a capping layer, which can be monolithically patterned with source/drain electrodes, the IGZO TFTs have shown enhanced mobility as high as similar to 60 cm(2)/V-s, subthreshold slope of <0.1 V/decade, and threshold voltage of similar to 1-2 V. We found that metallic capping layers having work function lower than that of the channel material can induce a significant reduction in series resistance and enhance the apparent field-effect mobility of the device. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2014.2329955 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.8, pp 850 - 852 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000341573000014 | - |
dc.identifier.scopusid | 2-s2.0-84905081469 | - |
dc.citation.endPage | 852 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 850 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Metallic capping layer | - |
dc.subject.keywordAuthor | transparent capping | - |
dc.subject.keywordAuthor | indium-gallium-zinc oxide | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | high mobility | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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