Electrical Transport Characterization of PEDOT:PSS/n-Si Schottky Diodes and Their Applications in Solar Cells
DC Field | Value | Language |
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dc.contributor.author | Khurelbaatar, Zagarzusem | - |
dc.contributor.author | Hyung, Jung-Hwan | - |
dc.contributor.author | Kim, Gil-Sung | - |
dc.contributor.author | Park, No-Won | - |
dc.contributor.author | Shim, Kyu-Hwan | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.available | 2019-03-08T21:42:34Z | - |
dc.date.issued | 2014-06 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/12151 | - |
dc.description.abstract | We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of similar to 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I-SC), open circuit voltage (V-OC), and conversion efficiency (eta) were similar to 19.7 mA/cm(2), similar to 578.5 mV, and similar to 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT: PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Electrical Transport Characterization of PEDOT:PSS/n-Si Schottky Diodes and Their Applications in Solar Cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2014.7937 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.6, pp 4394 - 4399 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000332339500059 | - |
dc.identifier.scopusid | 2-s2.0-84899722242 | - |
dc.citation.endPage | 4399 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 4394 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 14 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | PEDOT:PSS | - |
dc.subject.keywordAuthor | Schottky Diodes | - |
dc.subject.keywordAuthor | Current-Voltage Measurement | - |
dc.subject.keywordAuthor | Capacitance-Voltage Measurement | - |
dc.subject.keywordAuthor | Conversion Efficiency | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | C-V | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | SOLVENTS | - |
dc.subject.keywordPlus | ANODE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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