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Investigation of Sensor Performance in Accumulation- and Inversion-Mode Silicon Nanowire pH Sensors
- Authors
- Lee, Jieun; Choi, Bongsik; Hwang, Seonwook; Lee, Jung Han; Park, Byung-Gook; Park, Tae Jung; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin
- Issue Date
- May-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Accumulation (ACC)-mode transistor; biosensor; inversion (INV)-mode transistor; ion-sensitive field-effect transistor (FET); silicon nanowire (SiNW) FET
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.5, pp 1607 - 1610
- Pages
- 4
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 61
- Number
- 5
- Start Page
- 1607
- End Page
- 1610
- ISSN
- 0018-9383
1557-9646
- Abstract
- We investigate the performance of accumulation (ACC)-mode and inversion (INV)-mode silicon nanowire (SiNW) pH sensors that are electrically controlled by a liquid gate. The two sensing parameters of the changes of threshold voltage and current are explored in both types of SiNW pH sensors at different pH levels. As device dimensions and channel doping concentration increase, the performance of the ACC-mode biosensor degrades more rapidly than the performance of the INV-mode biosensor. Therefore, INV-mode SiNW pH sensors with a liquid gate could be robust to process variation and provide improved current sensitivity.
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Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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