A fully integrated 33.8-dBm bulk CMOS T/R switch with a negative-voltage switch controller
- Authors
- Yun, Sunwoo; Lee, Jeong-Yun; Ha, Keum-Won; Kim, Jeong-Geun; Baek, Donghyun
- Issue Date
- Dec-2013
- Publisher
- SPRINGER
- Keywords
- RF; T/R; Bulk CMOS switch; Triple-level shifter; Body floating
- Citation
- ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, v.77, no.3, pp 557 - 565
- Pages
- 9
- Journal Title
- ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
- Volume
- 77
- Number
- 3
- Start Page
- 557
- End Page
- 565
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14070
- DOI
- 10.1007/s10470-013-0201-0
- ISSN
- 0925-1030
1573-1979
- Abstract
- This paper presents a single-pole double-throw CMOS transmit/receiver (T/R) switch in a standard 0.18 mu m CMOS process. The T/R switch uses 6-stacked body-floated N-MOSFETs to enhance linearity, and a negative-voltage controller integrated on a single die with the power switch cell. A complementary DICSON charge pump is employed to generate the negative voltages and three-step level shifters are used to control the switch cell. The fabricated T/R switch has P-1dB of 33.8 and 32.6 dBm at 900 and 1,800 MHz from a 2 V supply, respectively. The insertion losses of TX are 0.7 and 1.1 dB at 900 and 1,800 MHz, respectively. The isolations from TX to ANT and RX to ANT are > 25 dB at both frequencies, and the return losses are > 20 dB. The proposed T/R switch shows comparable or better performance compared to the previously reported T/R switches without the switch controller.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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