Wafer-Scale Patterning of Reduced Graphene Oxide Electrodes by Transfer-and-Reverse Stamping for High Performance OFETs
- Authors
- Lee, Joong Suk; Kim, Nam Hee; Kang, Moon Sung; Yu, Hojeong; Lee, Dong Ryoul; Oh, Joon Hak; Chang, Suk Tai; Cho, Jeong Ho
- Issue Date
- Aug-2013
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- reduced graphene oxide; micropatterning; thin films; source-drain electrodes; flexible inverters
- Citation
- SMALL, v.9, no.16, pp 2817 - 2825
- Pages
- 9
- Journal Title
- SMALL
- Volume
- 9
- Number
- 16
- Start Page
- 2817
- End Page
- 2825
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14370
- DOI
- 10.1002/smll.201300538
- ISSN
- 1613-6810
1613-6829
- Abstract
- A wafer-scale patterning method for solution-processed graphene electrodes, named the transfer-and-reverse stamping method, is universally applicable for fabricating source/drain electrodes of n- and p-type organic field-effect transistors with excellent performance. The patterning method begins with transferring a highly uniform reduced graphene oxide thin film, which is pre-prepared on a glass substrate, onto hydrophobic silanized (rigid/flexible) substrates. Patterns of the as-prepared reduced graphene oxide films are then formed by modulating the surface energy of the films and selectively delaminating the films using an oxygen-plasma-treated elastomeric stamp with patterns. Reduced graphene oxide patterns with various sizes and shapes can be readily formed onto an entire wafer. Also, they can serve as the source/drain electrodes for benchmark n- and p-type organic field-effect transistors with enhanced performance, compared to those using conventional metal electrodes. These results demonstrate the general utility of this technique. Furthermore, this simple, inexpensive, and scalable electrode-patterning-technique leads to assembling organic complementary circuits onto a flexible substrate successfully.
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