Current-Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner
DC Field | Value | Language |
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dc.contributor.author | Choi, Byung-Kil | - |
dc.contributor.author | Jeong, Min-Kyu | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.available | 2019-03-09T01:57:03Z | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14608 | - |
dc.description.abstract | The drain current of fully depleted (FD) nanoscale bulk FinFETs with the top-channel of a half-circle shape was modeled, for the first time, systematically in all operational regions and compared with the data obtained from three-dimensional (3D) device simulation. In the current model of these devices, it is very important to have accurate threshold voltages for side-channels and top-channel, and take the field penetration effect induced by the top-gate near the top of a fin body into account the threshold voltage (Vth) models for top-channels and side-channels, respectively. So, we obtained successfully the Vth models [Vth(0,t) (Vth model of top-channel at a low drain bias) and Vth(0,s) (Vth model of side-channels at a low drain bias)] considering the field penetration effect for both channels (top-and side-channels) to model the current behaviors in the doped bulk FinFETs with the top-channel of a half-circle shape. Our compact current model with Vth(0,t) and Vth(0,s) predicted accurately the current behaviors of the devices and shown a good agreement with 3D simulation. (C) 2013 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Current-Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/JJAP.52.064202 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.6 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000319998200026 | - |
dc.identifier.scopusid | 2-s2.0-84881059030 | - |
dc.citation.number | 6 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.type.docType | Article | - |
dc.publisher.location | 일본 | - |
dc.subject.keywordPlus | DOUBLE-GATE MOSFETS | - |
dc.subject.keywordPlus | DRAIN-CURRENT MODEL | - |
dc.subject.keywordPlus | SHORT-CHANNEL | - |
dc.subject.keywordPlus | FINFETS | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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