DESIGN OF SENSE AMPLIFIER FOR NON-VOLATILE MEMORY

Abstract

Design of Sense Amplifier (SA) for non-volatile memory (NVM) in Radio Frequency Identification (RFID) tag is illustrated in this research. SA is one of the significant module in NVM like electrically erasable programmable read only memory (EEPROM). In low power applications, memory access time, power dissipation and the reliability influenced the performance of the SA to store data in RFID transponder EEPROM. Among the current or voltage type SA, first one dissipates higher power than the second one, which is usually avoidable for low voltage applications. The proposed design of SA is able to operate under a very low VDD, which is implemented with CEDEC 0.18 mu m CMOS process within the temperature range from -25 degrees C to 125 degrees C. Moreover, the proposed SA required less power with better performances than other research works.