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A Continuous Current Model of Accumulation Mode (Junctionless) Cylindrical Surrounding-Gate Nanowire MOSFETs
- Authors
- Jin Xiao-Shi; Liu Xi; Kwon, Hyuck-In; Lee, Jong-Ho
- Issue Date
- Mar-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- CHINESE PHYSICS LETTERS, v.30, no.3
- Journal Title
- CHINESE PHYSICS LETTERS
- Volume
- 30
- Number
- 3
- ISSN
- 0256-307X
1741-3540
- Abstract
- A continuous current model of accumulation mode or so-called junctionless (JL) cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors (MOSFETs) is proposed. The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations. It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement. Without any empirical fitting parameters, the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.
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