A biristor based on a floating-body silicon nanowire for biosensor applications
- Authors
- Moon, Dong-Il; Peycelon, Maxime; Kim, Jee-Yeon; Ahn, Jae-Hyuk; Park, Tae Jung; Choi, Yang-Kyu
- Issue Date
- Jan-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.4
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 4
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14940
- DOI
- 10.1063/1.4789904
- ISSN
- 0003-6951
1077-3118
- Abstract
- A silicon nanowire (SiNW), which has been named "biristor" (bistable resistor), is demonstrated for biosensor applications. The SiNW is composed of three segments: n-type (source), p-type (floating-body), and n-type (drain). Its structure is based on a metal-oxide-semiconductor field-effect transistor without a gate. The biristor uses the uncovered floating-body as a sensing site, and it is triggered by impact ionization. A charge effect arising from biomolecules influences the triggering voltage, which is a sensing metric and changes the resistance of the SiNW. The biristor can be a promising candidate for biosensors in terms of complementary metal-oxide-semiconductor compatibility, low-cost, and compact density. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789904]
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Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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