Dry Etch Properties of ZTO Thin Films Using Inductively Coupled Plasma

Abstract

In this study, we investigated the surface reaction of zinc tin oxide (ZTO) thin films at N-2/BCl3/Ar plasma. The maximum etch rate of 136nm/min for the ZTO thin films was obtained at N-2/BCl3/Ar (3/6/14 sccm) gas mixing ratio. The etch conditions were the RF power of 600W, the DC-bias voltage of -150V, the process pressure of 2 Pa, and the substrate temperature of 40 degrees C. Corresponding to these etching conditions, chemical reaction of the etched ZTO surface has been studied by x-ray photoelectron spectroscopy measurement to investigate the chemical reactions between the surfaces of ZTO thin film and etch species. Surface morphology of the etched ZTO thin films was characterized using atomic force microscope.