Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)
DC Field | Value | Language |
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dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Jo, Young-Woo | - |
dc.contributor.author | Son, Dong-Hyeok | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Kang, In Man | - |
dc.date.available | 2019-01-22T14:23:47Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1770 | - |
dc.description.abstract | In this work, an InAs-based gate-all-around (GAA) arch-shaped tunneling field-effect transistor (TFET) was designed and analyzed using technology computer-aided design (TCAD) simulations. To progress the DC/RF characteristics of GAA arch-shaped TFET, InAs, a highly attractive III-V compound material, is adopted as a channel material. Owing to the GAA arch-shaped structure of TFET, the tunneling region under the gate area is extended, and the on-state current (I-on) and subthreshold-swing (S) are improved. However, it has some performance limitations that are related to the height of the source region (H-source) and the epitaxially grown thickness of the channel (t(epi)). Thus, we performed a design optimization of the InAs-based GAA arch-shaped TFET with the variables H-source and t(epi). After the optimization process, RF characteristics such as gate capacitance, transconductance (g(m)), cutoff frequency (f(T)), and maximum oscillation frequency (f(max)) were extracted and analyzed by small-signal RF modeling. Finally, the designed InAs-based GAA arch-shaped TFET demonstrated an I-on of 10.6 mA/mu m, S of 6.5 mV/dec, f(T) of 2.3 THz, and f(max) of 20 THz. | - |
dc.format.extent | 5 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2016.13127 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.10, pp 10199 - 10203 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000387100600006 | - |
dc.identifier.scopusid | 2-s2.0-84990998400 | - |
dc.citation.endPage | 10203 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 10199 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | III-V Compound Semiconductor | - |
dc.subject.keywordAuthor | InAs | - |
dc.subject.keywordAuthor | GAA | - |
dc.subject.keywordAuthor | Arch Shape | - |
dc.subject.keywordAuthor | TFET | - |
dc.subject.keywordAuthor | TCAD | - |
dc.subject.keywordPlus | POWER APPLICATION | - |
dc.subject.keywordPlus | FET | - |
dc.subject.keywordPlus | LAYER | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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