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Power Semiconductor Module With Low-Permittivity Material to Reduce Common-Mode Electromagnetic Interference
- Authors
- Shin, Jong-Won; Wang, Chi-Ming; Dede, Ercan M.
- Issue Date
- Dec-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Common-mode (CM) current; conducted electromagnetic interference (EMI); power semiconductor module; parasitic capacitance
- Citation
- IEEE TRANSACTIONS ON POWER ELECTRONICS, v.33, no.12, pp 10027 - 10031
- Pages
- 5
- Journal Title
- IEEE TRANSACTIONS ON POWER ELECTRONICS
- Volume
- 33
- Number
- 12
- Start Page
- 10027
- End Page
- 10031
- ISSN
- 0885-8993
1941-0107
- Abstract
- The layout of a low-permittivity material is designed in a power semiconductor module to reduce parasitic common-mode (CM) capacitance and hence attenuate the CM current. Without sacrificing the thermal performance between the semiconductor devices and heat sink, a portion of the bottom copper of a direct-bond-copper substrate is replaced by air to decrease capacitance. The proposed power module is verified in a 1-kW 100-kHz buck converter. The CM current is decreased by 8 dB in the frequency domain without any additional components or filters.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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