Structural, optical, and electrical properties of boron-doped ZnO1-xSx thin films deposited by MOCVD
DC Field | Value | Language |
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dc.contributor.author | Lee, Kyunghwa | - |
dc.contributor.author | Kim, Yongshin | - |
dc.contributor.author | Song, Nakyung | - |
dc.contributor.author | Choi, In-Hwan | - |
dc.contributor.author | Park, Soon Yong | - |
dc.date.available | 2019-05-28T02:46:29Z | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18350 | - |
dc.description.abstract | Boron-doped ZnO1-xSx, (ZnO1-xSx:B) thin films were fabricated by metalorganic chemical vapor deposition (MOCVD). We investigated the structural, optical, and electrical properties of the ZnO1-xSx:B thin films. X-ray diffraction patterns showed that, except for the ZnO:B (x = 0) and ZnS:B (x = 1) thin films, the ZnO1-xSx:B thin films exhibit amorphous characters. Optical transmittance spectra were analyzed to estimate the band gaps of the thin films with different S content. All thin films showed direct band gaps ranging from 3.34 eV (ZnO:B) to 3.49 eV (ZnS:B). The influence of sulfur content on carrier concentration, electrical resistivity, and Hall mobility of the ZnO1-xSx:B thin films were analyzed from Hall effect measurements measured at temperatures ranging from liquid nitrogen temperature to room temperature. The ZnO1-xSx:B thin films exhibited n-type electrical conductivity except for ZnS:B, which was not measurable in this study due to its high resistivity ( > 100 Omega cm). | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Structural, optical, and electrical properties of boron-doped ZnO1-xSx thin films deposited by MOCVD | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.cap.2018.10.018 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.19, no.1, pp 14 - 19 | - |
dc.identifier.kciid | ART002433769 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000450425000003 | - |
dc.identifier.scopusid | 2-s2.0-85056212941 | - |
dc.citation.endPage | 19 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 14 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 19 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | ZnS | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Hall effect | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordPlus | CHEMICAL BATH DEPOSITION | - |
dc.subject.keywordPlus | SPRAY-PYROLYSIS | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | BUFFER | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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