Structural, optical, and electrical properties of boron-doped ZnO1-xSx thin films deposited by MOCVD
- Authors
- Lee, Kyunghwa; Kim, Yongshin; Song, Nakyung; Choi, In-Hwan; Park, Soon Yong
- Issue Date
- Jan-2019
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ZnO; ZnS; Thin film; Hall effect; MOCVD
- Citation
- CURRENT APPLIED PHYSICS, v.19, no.1, pp 14 - 19
- Pages
- 6
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 19
- Number
- 1
- Start Page
- 14
- End Page
- 19
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18350
- DOI
- 10.1016/j.cap.2018.10.018
- ISSN
- 1567-1739
1878-1675
- Abstract
- Boron-doped ZnO1-xSx, (ZnO1-xSx:B) thin films were fabricated by metalorganic chemical vapor deposition (MOCVD). We investigated the structural, optical, and electrical properties of the ZnO1-xSx:B thin films. X-ray diffraction patterns showed that, except for the ZnO:B (x = 0) and ZnS:B (x = 1) thin films, the ZnO1-xSx:B thin films exhibit amorphous characters. Optical transmittance spectra were analyzed to estimate the band gaps of the thin films with different S content. All thin films showed direct band gaps ranging from 3.34 eV (ZnO:B) to 3.49 eV (ZnS:B). The influence of sulfur content on carrier concentration, electrical resistivity, and Hall mobility of the ZnO1-xSx:B thin films were analyzed from Hall effect measurements measured at temperatures ranging from liquid nitrogen temperature to room temperature. The ZnO1-xSx:B thin films exhibited n-type electrical conductivity except for ZnS:B, which was not measurable in this study due to its high resistivity ( > 100 Omega cm).
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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