Dry etching characteristics of indium zinc oxide thin films in adaptive coupled plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, J.-C. | - |
dc.contributor.author | Choi, C.-A. | - |
dc.contributor.author | Kim, C.-I. | - |
dc.date.available | 2019-05-29T03:38:20Z | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 1229-7607 | - |
dc.identifier.issn | 2092-7592 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/19864 | - |
dc.description.abstract | The etching characteristics of indium zinc oxide (IZO) in Cl2/Ar plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing Cl2 fraction in the Cl2/Ar plasma, and with increasing source power, bias power, and process pressure. In the Cl2/Ar (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to SiO2 were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching. © 2013 KIEEME. All rights reserved. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | Dry etching characteristics of indium zinc oxide thin films in adaptive coupled plasma | - |
dc.title.alternative | Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma | - |
dc.type | Article | - |
dc.identifier.doi | 10.4313/TEEM.2013.14.4.216 | - |
dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.14, no.4, pp 216 - 220 | - |
dc.identifier.kciid | ART001793665 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-84881235513 | - |
dc.citation.endPage | 220 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 216 | - |
dc.citation.title | Transactions on Electrical and Electronic Materials | - |
dc.citation.volume | 14 | - |
dc.type.docType | Article | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Cl2 | - |
dc.subject.keywordAuthor | Etching | - |
dc.subject.keywordAuthor | Indium zinc oxide | - |
dc.subject.keywordAuthor | IZO | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Chemical etching | - |
dc.subject.keywordPlus | Etch selectivity | - |
dc.subject.keywordPlus | Etched surface | - |
dc.subject.keywordPlus | Etching characteristics | - |
dc.subject.keywordPlus | Indium zinc oxides | - |
dc.subject.keywordPlus | IZO | - |
dc.subject.keywordPlus | Physical sputtering | - |
dc.subject.keywordPlus | Process pressure | - |
dc.subject.keywordPlus | Etching | - |
dc.subject.keywordPlus | Ion bombardment | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Photoelectrons | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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