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The preparation of a CuInSe2 solar cell by metal organic chemical vapor deposition
- Authors
- Choi, In-Hwan
- Issue Date
- Dec-2012
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Metal organic chemical vapor deposition; Copper indium diselenide; Thin film solar cell; Zinc oxide
- Citation
- THIN SOLID FILMS, v.525, pp 137 - 140
- Pages
- 4
- Journal Title
- THIN SOLID FILMS
- Volume
- 525
- Start Page
- 137
- End Page
- 140
- ISSN
- 0040-6090
- Abstract
- This is the report of a CuInSe2(CIS) solar cell prepared by a full metal organic chemical vapor deposition (MOCVD) technique. A CIS/Zn(S,O)/ZnO:B solar cell was prepared by a MOCVD technique. CIS absorber layers were grown by a three step MOCVD technique on a Mo back electrode which was coated on soda-lime glass. Zn(S,O) buffer and ZnO:B window layers were also consecutively fabricated on the CIS absorber layer by a MOCVD technique. The CIS/Zn(S,O)/ZnO:B solar cell prepared in this study demonstrated an energy conversion efficiency of 10.45%, a fill factor of 60.3%, an open circuit voltage of 487 mV, and a short circuit current density of 35.7 mA/cm(2). (C) 2012 Elsevier B.V. All rights
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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