Capacitive proximity sensor with negative capacitance generation technique
- Authors
- Cho, S. -I.; Lim, S. -I.; Baek, K. -H.; Kim, S.
- Issue Date
- Oct-2012
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.48, no.22, pp 1409 - 1410
- Pages
- 2
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 48
- Number
- 22
- Start Page
- 1409
- End Page
- 1410
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/20092
- DOI
- 10.1049/el.2012.2783
- ISSN
- 0013-5194
1350-911X
- Abstract
- An oscillator-based capacitive proximity sensor is presented. To improve the sensor's sensitivity by minimising the effect of parasitic capacitance, the proposed sensor employs a negative capacitance generation technique. The sensor is implemented with a standard 0.18 mu m CMOS technology, and the measurement results show that frequency variation is about 1.4% at 5 cm distance while only consuming an 85 mu A current. The die area occupies 520 by 280 mu m, and the size of an external sensing plate is 0.5 by 0.5 cm.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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