Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices

Abstract

Low-frequency noise (LFN) characteristics have been studied in polycrystalline-TiOx-based resistive random access memories (RRAMs). LFNs are proportional to 1/f in high-resistance state (HRS), but those in low-resistance state (LRS) are proportional to 1/f only in less than similar to 100 Hz. The normalized noise power in HRS is around three orders of magnitude higher than that in LRS. Bias dependence of 1/f noise shows that the current conduction mechanisms from noise measurements are consistent with those from the current-voltage relationships in TiOx-based unipolar RRAM devices.