Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jung-Kyu | - |
dc.contributor.author | Cho, In-Tak | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.contributor.author | Park, Chan Hyeong | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.available | 2019-05-29T05:41:14Z | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/20215 | - |
dc.description.abstract | Low-frequency noise (LFN) characteristics have been studied in polycrystalline-TiOx-based resistive random access memories (RRAMs). LFNs are proportional to 1/f in high-resistance state (HRS), but those in low-resistance state (LRS) are proportional to 1/f only in less than similar to 100 Hz. The normalized noise power in HRS is around three orders of magnitude higher than that in LRS. Bias dependence of 1/f noise shows that the current conduction mechanisms from noise measurements are consistent with those from the current-voltage relationships in TiOx-based unipolar RRAM devices. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2012.2196670 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.33, no.7, pp 1063 - 1065 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000305835300049 | - |
dc.identifier.scopusid | 2-s2.0-84862860870 | - |
dc.citation.endPage | 1065 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1063 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 33 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Conduction mechanism | - |
dc.subject.keywordAuthor | low-frequency noise (LFN) | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | resistive random access memory (RRAM) | - |
dc.subject.keywordPlus | 1/F NOISE | - |
dc.subject.keywordPlus | OXIDE-FILMS | - |
dc.subject.keywordPlus | 1-F NOISE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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