The dry etching properties on TiN thin film using an N<inf>2</inf>/BCl<inf>3</inf>/Ar inductively coupled plasma
DC Field | Value | Language |
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dc.contributor.author | Woo, J.-C. | - |
dc.contributor.author | Joo, Y.-H. | - |
dc.contributor.author | Park, J.-S. | - |
dc.contributor.author | Kim, C.-I. | - |
dc.date.available | 2019-05-30T00:19:32Z | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 1229-7607 | - |
dc.identifier.issn | 2092-7592 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/21868 | - |
dc.description.abstract | In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a N2/BCl3/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = 40°C, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the SiO2 thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism. © 2011 KIEEME. All rights reserved. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Korean Institute of Electrical and Electronic Material Engineers | - |
dc.title | The dry etching properties on TiN thin film using an N<inf>2</inf>/BCl<inf>3</inf>/Ar inductively coupled plasma | - |
dc.type | Article | - |
dc.identifier.doi | 10.4313/TEEM.2011.12.4.144 | - |
dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.12, no.4, pp 144 - 147 | - |
dc.identifier.kciid | ART001584636 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-84930472841 | - |
dc.citation.endPage | 147 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 144 | - |
dc.citation.title | Transactions on Electrical and Electronic Materials | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Etch | - |
dc.subject.keywordAuthor | Inductively coupled plasma | - |
dc.subject.keywordAuthor | Tin | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Bias voltage | - |
dc.subject.keywordPlus | Byproducts | - |
dc.subject.keywordPlus | DC power transmission | - |
dc.subject.keywordPlus | Dry etching | - |
dc.subject.keywordPlus | Inductively coupled plasma | - |
dc.subject.keywordPlus | Metallic films | - |
dc.subject.keywordPlus | Photoelectricity | - |
dc.subject.keywordPlus | Photoelectron spectroscopy | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Plasma etching | - |
dc.subject.keywordPlus | Silica | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Tin | - |
dc.subject.keywordPlus | Titanium | - |
dc.subject.keywordPlus | Titanium nitride | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Base-line conditions | - |
dc.subject.keywordPlus | Chemical etching | - |
dc.subject.keywordPlus | Dc bias voltage | - |
dc.subject.keywordPlus | Direct current | - |
dc.subject.keywordPlus | Etch | - |
dc.subject.keywordPlus | Etch rates | - |
dc.subject.keywordPlus | Etched surface | - |
dc.subject.keywordPlus | Etching characteristics | - |
dc.subject.keywordPlus | Etching parameters | - |
dc.subject.keywordPlus | Etching properties | - |
dc.subject.keywordPlus | Gas mixing ratio | - |
dc.subject.keywordPlus | Inductively-coupled | - |
dc.subject.keywordPlus | Process pressure | - |
dc.subject.keywordPlus | Radio frequency power | - |
dc.subject.keywordPlus | Reactive ion | - |
dc.subject.keywordPlus | Rf-power | - |
dc.subject.keywordPlus | SiO2 thin films | - |
dc.subject.keywordPlus | Substrate temperature | - |
dc.subject.keywordPlus | TiN thin films | - |
dc.subject.keywordPlus | Reactive ion etching | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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