Role of silicon in silicon-indium-zinc-oxide thin-film transistor
- Authors
- Chong, Eugene; Kim, Seung Han; Lee, Sang Yeol
- Issue Date
- Dec-2010
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.97, no.25
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 97
- Number
- 25
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/22004
- DOI
- 10.1063/1.3530453
- ISSN
- 0003-6951
1077-3118
- Abstract
- Silicon effect on the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films has been investigated for thin-film transistor applications depending on composition ratio and annealing-temperature. X-ray diffraction, x-ray photoelectron spectroscopy, and time-of-flight secondary-ion-mass-spectrometry have been used to characterize the properties of SIZO thin-film channel layer with different Si concentrations and annealing-temperatures. Those results revealed that Si is more strongly binding with oxygen since their high metal-oxygen bonding-strength and low standard electric potential, which result in implying Si, allow the amorphous oxide semiconductors to achieve oxide-lattice structures even at a low-temperature of 150 degrees C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3530453]
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Collections - College of Engineering > School of Mechanical Engineering > 1. Journal Articles
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