Detailed Information
Cited 20 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Preparation of CuIn1-xGaxSe2 films by metalorganic chemical vapor deposition using three precursors
- Authors
- Choi, I. H.; Lee, D. H.
- Issue Date
- Apr-2007
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- CIGS; CIS; CulnSe(2); CulnGaSe(2)
- Citation
- THIN SOLID FILMS, v.515, no.11, pp 4778 - 4782
- Pages
- 5
- Journal Title
- THIN SOLID FILMS
- Volume
- 515
- Number
- 11
- Start Page
- 4778
- End Page
- 4782
- ISSN
- 0040-6090
- Abstract
- CulnGaSe(2) thin films have been prepared by a low pressure metalorganic chemical vapor deposition technique using three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, micro-Raman scattering and absorption spectroscopy. (c) 2006 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.