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Properties of a CuAu phase of AgGaSe2 grown on [100] GaAs substrate
- Issue Date
- Dec-2005
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.87, no.23, pp 1 - 3
- Pages
- 3
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 87
- Number
- 23
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- Recently, it has been suggested theoretically [A. Janotti and S.-H. Wei, Appl. Phys. Lett. 81, 3957 (2002)] that, if AgGaSe2 with the CuAu structure can be grown epitaxially on ZnSe, it will be an excellent source for spin-polarized electrons. Here we report the growth and properties of epitaxial films of AgGaSe2 with the CuAu structure on (100) GaAs substrates and compared them with those of chalcopyrite AgGaSe2. (c) 2005 Americian Institute of Physics.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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