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Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy
- Issue Date
- May-2005
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- strain; hot-wall epitaxy; alpha-MnSe
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.279, no.1-2, pp 70 - 75
- Pages
- 6
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 279
- Number
- 1-2
- Start Page
- 70
- End Page
- 75
- ISSN
- 0022-0248
1873-5002
- Abstract
- alpha-MnSe epilayers were grown on (100) GaAs substrates by hot-wall epitaxy and their structural characteristics were studied. X-ray diffraction (XRD) and double crystal rocking curve measurements revealed that the epilayer is a homogeneous layer of MnSe with a rocksalt structure in the (100) direction. Asymmetric XRD revealed that biaxial tensile strain remained in a 200 nm thick alpha-MnSe epilayer. (c) 2005 Elsevier B.V. All rights reserved.
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