The effect of Cr doping on the microstructural and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films
- Authors
- Kim, KT; Kim, CI
- Issue Date
- Jan-2005
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- BST; sol-gel; tunability; dielectric properties
- Citation
- THIN SOLID FILMS, v.472, no.1-2, pp 26 - 30
- Pages
- 5
- Journal Title
- THIN SOLID FILMS
- Volume
- 472
- Number
- 1-2
- Start Page
- 26
- End Page
- 30
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/24673
- DOI
- 10.1016/j.tsf.2004.05.128
- ISSN
- 0040-6090
1879-2731
- Abstract
- Ba0.6Sr0.4TiO3 (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and X-ray diffraction analysis showed that increasing the Cr-doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol% of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of 5.31 x 10(-8) A/cm(2). The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices, (C) 2004 Elsevier B.V. All rights reserved.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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