Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor

Abstract

Phase-pure InSe thin films have been prepared by a low-pressure metalorganic chemical vapor deposition technique using a single-source precursor: [(Me)(2)In(mu-SeMe)](2). These films have been characterized by x-ray diffraction and scanning electron microscopy and found to be single-phased and polycrystalline with a hexagonal lattice. The optical properties of the films have been studied via absorption, photoluminescence, and Raman spectroscopies. (C) 2003 American Institute of Physics.