Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor
- Authors
- Choi, IH; Yu, PY
- Issue Date
- Apr-2003
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.93, no.8, pp 4673 - 4677
- Pages
- 5
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 93
- Number
- 8
- Start Page
- 4673
- End Page
- 4677
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/25003
- DOI
- 10.1063/1.1561584
- ISSN
- 0021-8979
1089-7550
- Abstract
- Phase-pure InSe thin films have been prepared by a low-pressure metalorganic chemical vapor deposition technique using a single-source precursor: [(Me)(2)In(mu-SeMe)](2). These films have been characterized by x-ray diffraction and scanning electron microscopy and found to be single-phased and polycrystalline with a hexagonal lattice. The optical properties of the films have been studied via absorption, photoluminescence, and Raman spectroscopies. (C) 2003 American Institute of Physics.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/25003)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.