Detailed Information
Cited 5 time in 
Cited 5 time in 
Cited 5 time in
Metadata Downloads
Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 mu m
- Authors
- Kim, Doo Gun; Lee, Hee Hyun; Choi, Woon Kyung; Choi, Young Wan; Lee, Seok; Woo, Deok Ha; Byun, Young Tae; Kim, Jae Hun; Kim, Sun Ho; Nakano, Yoshiaki
- Issue Date
- Jan-2003
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.82, no.2, pp 158 - 160
- Pages
- 3
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 82
- Number
- 2
- Start Page
- 158
- End Page
- 160
- ISSN
- 0003-6951
1077-3118
- Abstract
- We present a demonstration of a waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple-quantum-well structure. The measured switching voltage and current are 4.63 V and 10 muA, respectively. The holding voltage and current are, respectively, 0.59 V and 20 muA. The lasing threshold currents at 25 degreesC and 10 degreesC are 111 mA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561 mum at a bias current equal to 1.41 times threshold. (C) 2003 American Institute of Physics.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.